Last edited by Zulkigor
Sunday, July 12, 2020 | History

4 edition of Intense Terahertz Excitation of Semiconductors (Series on Semiconductor Science and Technology) found in the catalog.

Intense Terahertz Excitation of Semiconductors (Series on Semiconductor Science and Technology)

by S. G. Ganichev

  • 333 Want to read
  • 36 Currently reading

Published by Oxford University Press, USA .
Written in English

    Subjects:
  • Condensed matter physics (liquids & solids),
  • Laser technology,
  • Optics (light),
  • Science,
  • Science/Mathematics,
  • Electronics - Semiconductors,
  • Optics,
  • Technology / Electronics / Semiconductors

  • The Physical Object
    FormatHardcover
    Number of Pages432
    ID Numbers
    Open LibraryOL9483737M
    ISBN 100198528302
    ISBN 109780198528302

    Pumping n-type GaAs and InSb with ultrafast THz pulses having intensities higher than MW/cm2 shows strong free-carrier absorption saturation at temperatures of K and K, respectively. If the energy imparted to the carriers exceeds the bandgap, impact ionization processes can occur. The dynamics of carrier cooling in GaAs and impact ionization in InSb were monitored using THz-pump. The most common photoconductor material, GaAs, requires laser excitation below nm, and ‘defect engineering’ is applied to maximize the terahertz bandwidth. p-i-n diodes, by contrast, are based on InGaAs/InP and are driven at μm, taking advantage of compact laser sources developed for optical communication systems.

    Intense Terahertz Excitation of Semiconductors, Ganichev and Prettl Terahertz Spectroscopy, Principles and Applications, Dexheimer Principles of Terahertz Science and Technology, Lee Introduction to Terahertz Wave Photonics, Zhang and Xu Terahertz Techniques, Brundermann et al.   The development of new sources and methods in the terahertz spectral range has generated intense interest in terahertz spectroscopy and its application in an array of fields. Presenting state-of-the-art terahertz spectroscopic techniques, Terahertz Spectroscopy: Principles and Applications focuses on time-domain methods based on femtosecond laser sources and important recent 5/5(2).

    This chapter deals with tunneling phenomena in high-frequency alternating fields comprising solely terahertz field-induced tunneling as well as terahertz radiation-mediated tunneling in static electric fields. The enhancement of tunneling probability with rising radiation frequency is treated in detail from an experimental and theoretical point of view. Discover Book Depository's huge selection of Willi Prettl books online. Free delivery worldwide on over 20 million titles.


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Intense Terahertz Excitation of Semiconductors (Series on Semiconductor Science and Technology) by S. G. Ganichev Download PDF EPUB FB2

Intense Terahertz Excitation of Semiconductors presents the first comprehensive treatment of high-power terahertz applications to semiconductors and low-dimensional semiconductor structures. Terahertz properties of semiconductors are in the center of scientific activities because of the need of high-speed by:   Buy Intense Terahertz Excitation of Semiconductors (Series on Semiconductor Science and Technology Book 14): Read Books Reviews - Buy Intense Terahertz Excitation of Semiconductors (Series on Semiconductor Science and Technology) by Ganichev, Sergey, Prettl, Willi, Ganichev, S.

(ISBN: ) from Amazon's Book Store. Everyday low prices and free delivery on eligible orders. Get this from a library. Intense terahertz excitation of semiconductors.

[S D Ganichev; W Prettl] -- This work presents the first comprehensive treatment of high-power terahertz applications to semiconductors and low-dimensional semiconductor structures. Terahertz properties of semiconductors are in. Intense Terahertz Excitation of Semiconductors presents the first comprehensive treatment of high-power terahertz applications to semiconductors and low-dimensional semiconductor structures.

Terahertz properties of semiconductors are in the center of scientific activities because of the need of high-speed electronics. This research monograph bridges the gap between microwave physics and. This book presents high-power terahertz applications to semiconductors and semiconductor structures.

It aims to bridge the gap between optics and microwave physics. It focuses on a core topic of semiconductor physics, providing a full description of the state of art of the field.

The book introduces new physical phenomena which occur in the terahertz frequency range at the transition from semi. Download Citation | Intense Terahertz Excitation of Semiconductors | This book presents high-power terahertz applications to semiconductors and semiconductor structures.

It aims to bridge the gap. Intense Terahertz Excitation of Semiconductors S. Ganichev and W. Prettl of the experimental work has been devoted to intense excitation of semicon- and instrumentation for high-power terahertz research. The book extends for the first time in the form of a monograph previous.

Intense Terahertz Excitation of Semiconductors. S.D. Ganichev. Terahertz Center, University of Regensburg,Regensburg, Germany. Abstract: The potential of the terahertz spectroscopy at high excitation level is demonstrated on the example of the recently observed new class of spin dependent elects: spin photocurrents.

Prettl: free download. Ebooks library. On-line books store on Z-Library | B–OK. Download books for free. Find books. Intense Terahertz Excitation of Semiconductors ~ S. Ganichev. Product DescriptionIntense Terahertz Excitation of Semiconductors presents the first comprehensive treatment of high-power terahertz applications to semiconductors and low-dimensional semiconductor structures.

Intense Terahertz Excitation of Semiconductors ~ S. Ganichev. and detection schemes of short intense pulses. The book complements, for the first time in form of a monograph, previous books on infrared physics which dealt with low-power optical and opto-electronic processes.

It will be useful not only to scientists but also to advanced. Intense Terahertz Summary Excitation of Semiconductors at Regensburg Center - S.D. Ganichev, and W. Prettl, Intense terahertz excitation of semiconductors Oxford University Press, pp.

1 - scheduled - S.D. Ganichev, in series ''Advances in Solid State Physics'', B. Kramer (Ed.) (Springer-Verlag Berlin-Heidelberg) Vol. 43, pp. The generation of terahertz (THz) radiation by ultrafast optical excitation of III–V semiconductors has been studied extensively in the last three decades.

One of the widely used THz sources/detectors is photoconductive antennas (PCAs) based on. Excitation of a metal-semiconductor nanostructure by intense terahertz (THz) pulses results in a fold amplification of longitudinal optical (LO) phonons at a frequency of 9 THz.

Books. Publishing Support. there is an immediate need to develop nonlinear THz spectroscopy techniques and intense terahertz sources that have the potential to reveal a new category of nonlinear phenomena and explore nonlinear effects in various materials.

the carrier mobility and the reflection of the semiconductor substrate at the. Intense terahertz (THz) pulses have been shown to induce photoluminescence (PL) quenching in bulk semiconductors. We show that in addition to PL quenching near the bandgap, intense THz pulses enhance the high-energy tail of the PL in GaAs.

Get this from a library. Intense terahertz excitation of semiconductors. [Sergey Ganichev; Willi Prettl] -- This work presents the first comprehensive treatment of high-power terahertz applications to semiconductors and low-dimensional semiconductor structures.

Terahertz properties of semiconductors are in. This final chapter presents the most up-to-date information on Bloch oscillations in semiconductor superlattices exposed to intense terahertz radiation.

The theoretical background of superlattice transport is discussed including miniband conductance, Wannier-Stark hopping, sequential tunneling, and the interplay between transport mechanisms.

"Intense Terahertz Excitation of Semiconductors" pages and figures S D Ganichev and W Prettl (Oxford University Press, ) ISBN: Details. The more accurate quantitative results are shown in Fig. in the book S.D. Ganichev and W.

Prettl: "Intense terahertz excitation of semiconductors", Oxford Series on Semiconductor Science and.Intense Terahertz Excitation of Semiconductors Sergey Ganichevand Willi Prettl, both at the University of Regensburg Intense Terahertz Excitation of Semiconductors presents the first comprehensive treatment of high-power terahertz applications to semiconductors and low-dimensional semiconductor structures.

Interaction of intense terahertz (THz) radiation pulse with matter has attracted considerable attention over the last decade [1–15].The interest is motivated by recent successful developments of single-cycle THz pulse sources [16–21] which have caused many promising applications in various fields such as large area imaging [22, 23], nonlinear THz spectroscopy [24–27].